| An efficient method for comprehensive modeling and parasitic extraction of cylindrical through-silicon vias in 3D ICs |
| 姚蔷;叶佐昌;喻文健; |
| 关键词：3D IC;through silicon via(TSV);parasitic |
| 主要内容：To build an accurate electric model for through-silicon vias(TSVs) in 3D integrated circuits(ICs),a resistance and capac |
| 《Journal of Semiconductors》 2015,36(08):154-160 |
| 全文下载请进入http://hightech.stlib.cn/tpi_1/sysasp/include/index.asp |
微信公众号