| Single event transient pulse width measurement of 65-nm bulk CMOS circuits |
| 岳素格;张晓林;赵馨远; |
| 关键词：SET;pulsewidth;65 nm |
| 主要内容：Heavy ion results of a 65-nm CMOS SET pulse width testchip are given. The influences of device threshold voltage, temper |
| 《Journal of Semiconductors》 2015,36(11):101-104 |
| 全文下载请进入http://hightech.stlib.cn/tpi_1/sysasp/include/index.asp |
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