| High energy proton and heavy ion induced single event transient in 65-nm CMOS technology |
| Jiaqi LIU;Yuanfu ZHAO;Liang WANG;Dan WAN |
| 关键词：NOR;High energy proton and heavy ion ind |
| 主要内容：As technology extends to nanometer scales,the critical charge to induce a single event decreases along with the technolo |
| 《Science China(Information Sciences)》 2017,60(12):123-125 |
| 全文下载请进入http://hightech.stlib.cn/tpi_1/sysasp/include/index.asp |
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