| Radio-Frequency Characteristics of Partial Dielectric Removal HR-SOI and TR-SOI Substrates |
| 程实;常永伟;高楠;董业民;费璐;魏星;王曦; |
| 关键词：SOI;Radio-Frequency Characteristics of P |
| 主要内容：High-resistivity silicon-on-insulator(HR-SOI) and trap-rich high-resistivity silicon-on-insulator(TR-SOI) substrates hav |
| 《Chinese Physics Letters》 2017,47(02):268-273 |
| 全文下载请进入http://hightech.stlib.cn/tpi_1/sysasp/include/index.asp |
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