| Controllable Fabrication of GeSi Nanowires in Diameter of About 10 nm Using the Top-Down Approach |
| 曾成;李毅;夏金松; |
| 关键词：Controllable Fabrication of GeSi Nanowir |
| 主要内容：Ordered GeSi nanowires with a ~10 nm cross section are fabricated utilizing top-down and Ge condensation techniques. In |
| 《Chinese Physics Letters》 2017,34(11):106-109 |
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