| RADIATION EFFECT ON FLUORINATED SiO2 FILMS |
| 张国强[1] 严荣良[2] 等 |
| 关键词：二氧化硅薄膜 辐照效应 阈值电压 |
| 主要内容：A systematic investigation of γ radiation effects in gate SiO2 as a function of the fluorine ion implantation conditions was performed.It has been found that the generation of interface states and oxide trapped charges in fluorinated MOSFETs depends strongly on implantation conditions.The action of F in oxides is the conjunction of positive and negative effects.A model by forming Si-F bonds to substitute the other strained bonds which easily become charge traps under irradiation and to relax the bond stress on Si/SiO2 interface is used for experimental explanation. |
| 《核技术：英文版》 1994,5(2).-124-128 |
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