| Effects of Electrode on Resistance Switching Properties of ZnMn_2O_4 Films Deposited by Magnetron Sputtering |
| 王华;LI Zhida;XU Jiwen;ZHANG Yup |
| 关键词：ZnMn2O4;resistance switching behavior;electrode;ma |
| 主要内容：ZnMn_2O_4 films for resistance random access memory(RRAM) were fabricated with different device structures by magnetron sputtering. The effects of ele |
| 《JWUT(Materials Science)》 2016(6).1230-1234 |
| 全文下载请进入http://hightech.stlib.cn/tpi_1/sysasp/include/index.asp |
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