| 10W QCW operation of a proton implanted GaAlAs diode laser array |
| ZHANGDaoyin[1] HUSiqiang[2] |
| 关键词：激光二极管 半导体激光器 量子阱 离子注入 光刻 |
| 主要内容：We report one thick layerof hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask,a 10 W QCW(quasi-continuous wave)operation of a narrow proton implanted multi-ple stripe conventional single quantum well separate confinement heterostructure (SQW-SCH)GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array has a lateral far-field beam divergence full width at half maximum(FWHM)of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°. |
| 《半导体光子学与技术：英文版》 1995,1(1).-52-56 |
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