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| - Design for manufacturability and reliability in ex...
- 作者：Bei YU;Xiaoqing XU;S... 来源期刊：Science China(Information Sciences) 年卷号：2016,59(06):96-118
- 摘要：In the last five decades, the number of transistors on a chip has increased exponentially in accordance with the Moore's
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- Looking into the future of Nanoelectronics in the ...
- 作者：Simon DELEONIBUS; 来源期刊：Science China(Information Sciences) 年卷号：2016,59(06):6-19
- 摘要：The linear scaling of CMOS has encountered, since its beginning, many hurdles which request new process modules, driven
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- Single event upset induced by single event double ...
- 作者：Pengcheng HUANG;Shum... 来源期刊：Science China(Information Sciences) 年卷号：2016,59(04):152-159
- 摘要：Single event upset (SEU) is one of the most important origins of soft errors in aerospace applications.As technology sca
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- Area-efficient transient power-rail electrostatic ...
- 作者：Yuan WANG;Guangyi LU... 来源期刊：Science China(Information Sciences) 年卷号：2016,59(04):112-120
- 摘要：A novel, area-efficient transient power-rail electrostatic discharge(ESD) clamp circuit is proposed in this work. Curren
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- Experimental characterization of the bipolar effec...
- 作者：CHEN JianJun;LIANG B... 来源期刊：Science China(Technological Sciences) 年卷号：2016,59(03):488-493
- 摘要：Single-event charge collection is controlled by drift, diffusion and the bipolar effect. Previous work has established t
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